Temperature control method in diffusion furnace

专利摘要:
Disclosed is a temperature control method in a diffusion furnace in which a diffusion process is performed in a semiconductor manufacturing process. This is because when the diffusion process is performed in a batch type vertical diffusion furnace which simultaneously processes a plurality of wafers, the process temperature of the film growth step is raised and lowered within a predetermined deviation range based on the predetermined process temperature. It characterized in that the diffusion process proceeds while adjusting the process temperature to be repeated. Thereby, the film quality formed on the wafer by the diffusion process can be formed uniformly regardless of the position of the upper surface of the wafer.
公开号:KR19990034774A
申请号:KR1019970056470
申请日:1997-10-30
公开日:1999-05-15
发明作者:이천무
申请人:윤종용；삼성전자 주식회사；
IPC主号:

专利说明:

Temperature control method in diffusion furnace
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature control method in a diffusion furnace in which a diffusion process is performed in a semiconductor manufacturing process. Particularly, in the case of performing a diffusion process in a batch type vertical diffusion furnace that processes a plurality of wafers simultaneously, It relates to a temperature control method in a diffusion furnace, characterized in that the process is carried out while adjusting the process temperature so that the process temperature of the step is repeated to rise and fall within a predetermined deviation range based on the predetermined process temperature.
The process of manufacturing a semiconductor proceeds according to the semiconductor device to which various processes of various steps are finally formed. These processes have a direct or indirect effect on the reliability and overall process efficiency of the final product due to unique factors in each process. As for factors, we are looking for ways to improve and suppress or minimize them. The present invention relates to a batch type vertical diffusion device currently commonly used in the process of diffusion process by growing a predetermined film quality, such as high temperature thermal oxide film, nitride, polysilicon, etc. on a wafer.
In the semiconductor manufacturing process, the variation in the thickness of the film on the wafer, which has not been highlighted as a big problem in the past, has become an important factor influencing the overall process in the light of the trend of high density and high integration of semiconductor devices. Therefore, a method of minimizing the film quality variation formed on the wafer has been studied. Particularly, in the case of batch type vertical diffusion equipment, a plurality of wafers are arranged side by side, so that a slight difference in process temperature may occur between the wafer located above the diffusion path and the wafer located below. This causes a variation in the thickness of the film to be formed on the wafer. Moreover, it is obvious that this problem will become more important as wafers become larger in size and process equipment becomes larger. In addition, the film quality may be formed in different thicknesses according to the position on the horizontal plane of the single wafer. This is because the temperature change of the wafer is most sensitive at the edge of the wafer as the process temperature changes, and the change rate is relatively small at the center of the wafer. Specifically, in the process of raising the process temperature, the temperature of the wafer edge first rises, and the temperature of the wafer center gradually rises by thermal transfer. On the other hand, in the process of lowering the process temperature, the heat transfer proceeds in the opposite direction to the rising process, so that the temperature at the wafer edge is lowered first and the temperature at the center of the wafer is gradually lowered.
The distribution of the temperature change may be formed on the wafer with different thicknesses depending on the plurality of top and bottom positions in which the batch process is in progress. Also, if the temperature change varies depending on the inside and outside positions on the single wafer, even on a single wafer, Film thickness growth of one thickness will not work properly.
Hereinafter, a conventional technology will be described with reference to the accompanying drawings and the problems thereof will be described.
1 is a graph showing a temperature change in a diffusion furnace in progress with a process time. Specifically, the process time in the two temperature ranges of the pre-process temperature (T1) and the process temperature (T2) is the pre-process step (A), the process temperature rise step (B), the main process step (C), the process temperature decrease step (D ) And post-process step (E) show the temperature change in each step. In this process step (C) of growing the film quality on the wafer, the process temperature (T2) is to maintain a uniform value. However, such a process temperature T2 results in a change in temperature on the wafer, resulting in the above-described temperature deviation on the wafer horizontal plane, resulting in a problem that the film quality on the wafer cannot be grown uniformly.
Therefore, the present invention has been devised in the background to solve the above problems by adjusting the process temperature (T2) of the present process step (C).
The technical problem to be achieved by the present invention is to form a uniform film quality on the wafer by reducing the temperature change according to the position on the wafer in the diffusion furnace during the diffusion process, the temperature control method in the diffusion furnace to achieve such a technical problem It is an object of the present invention to provide.
1 is a graph illustrating a temperature control method in a conventional diffusion furnace.
2 is a graph illustrating a method for controlling a temperature in a diffusion furnace according to the present invention.
The temperature control method in the diffusion furnace for achieving the technical problem to be achieved by the present invention described above is as follows. That is, the wafer is first mounted in the diffusion path. Subsequently, the temperature inside the diffusion furnace in which the wafer is mounted is raised to a predetermined process reference temperature. Subsequently, the film growth process is carried out while repeating the rise and fall in a range having a predetermined deviation range with respect to the process reference temperature.
At this time, the present invention is more preferably carried out by the following. That is, the diffusion path uses a batch type vertical diffusion path. The predetermined deviation range with respect to the process reference temperature is maintained while maintaining ± 2 ℃. It is more preferable to use the present invention in the process of growing any one material selected from high temperature thermal oxide film, nitride, and polysilicon on the wafer.
Hereinafter, with reference to the accompanying drawings an embodiment according to the present invention will be described in more detail and in detail.
2 is a graph showing the temperature change in the diffusion furnace during the diffusion process according to the present invention according to the process time. Specifically, the process time in the two temperature ranges of the pre-process temperature (T1) and the process reference temperature (T2) is the pre-process step (A), the process temperature rise step (B), the main process step (C '), the process temperature drop step The temperature change in each step is shown by dividing into (D) and post-process step (E). The main step (C ') of growing film quality on the wafer proceeds by adjusting the process temperature to repeat the rise and fall in a predetermined deviation (ΔT) range, e.g., ± 2 ° C, from the process reference temperature T2. do. At this time, the film quality to be grown on the wafer is determined in relation to the process purpose, but the material that is frequently grown may be a high temperature thermal oxide film, nitride, polysilicon and the like.
As such, when the diffusion process is performed while changing the process temperature of the present process step (C '), the film quality in the wafer can be formed more uniformly than in the conventional method.
As described above, the embodiments according to the present invention with reference to the accompanying drawings is not intended to limit the present invention, and other persons belonging to the same scope as the present invention by those skilled in the art of the present invention. No wonder the transformation to the sun is possible.
The present invention described above can form a film having a uniform thickness according to the position of the top, bottom, and horizontal of the wafer, thereby improving the yield and reliability of the semiconductor device, and the subsequent process is performed under the same conditions for the uniform wafer. As it progresses, it also increases the efficiency of process operation.

权利要求:
Claims (4)
[1" claim-type="Currently amended] Mounting a wafer in a diffusion path;
Raising the temperature inside the diffusion furnace to a predetermined process reference temperature; And
And proceeding with a film quality growth process by repeating the ascending and descending in a range having a predetermined deviation range with respect to the process reference temperature.
[2" claim-type="Currently amended] The method of claim 1, wherein the diffusion path is performed using a batch type vertical diffusion path.
[3" claim-type="Currently amended] The method of claim 1, wherein the predetermined deviation range with respect to the process reference temperature is maintained while maintaining ± 2 ℃.
[4" claim-type="Currently amended] The method of claim 1, wherein the film material growing on the wafer is any one material selected from a high temperature thermal oxide film, a nitride, and polysilicon.

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同族专利:

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引用文献:

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公开号 | 申请日 | 公开日 | 申请人 | 专利标题

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法律状态:
1997-10-30|Application filed by 윤종용, 삼성전자 주식회사

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1997-10-30|Priority to KR1019970056470A

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1999-05-15|Publication of KR19990034774A

优先权:

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申请号 | 申请日 | 专利标题

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KR1019970056470A|KR19990034774A|1997-10-30|1997-10-30|Temperature control method in diffusion furnace|